دیتاشیت FDV303N SOT23 SOT23 ماسفت کانال N
مشخصات دیتاشیت
نام دیتاشیت | FDV303N |
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حجم فایل | 268.19 کیلوبایت |
نوع فایل | |
تعداد صفحات | 7 |
دانلود دیتاشیت FDV303N |
FDV303N Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: FDV30
- detail: N-Channel 25V 680mA (Ta) 350mW (Ta) Surface Mount SOT-23