دیتاشیت FQPF3N80C
مشخصات دیتاشیت
| نام دیتاشیت | FQP3N80C, FQPF3N80C |
|---|---|
| حجم فایل | 907.849 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 12 |
دانلود دیتاشیت FQP3N80C, FQPF3N80C |
FQP3N80C, FQPF3N80C Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQPF3N80C
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 39W
- Total Gate Charge (Qg@Vgs): 16.5nC@10V
- Drain Source Voltage (Vdss): 800V
- Input Capacitance (Ciss@Vds): 705pF@25V
- Continuous Drain Current (Id): 3A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8Ω@10V,1.5A
- Package: TO-220F
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
- Base Part Number: FQPF3
- detail: N-Channel 800V 3A (Tc) 39W (Tc) Through Hole TO-220F
