- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت RFP70N06
RFP70N06 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | RFP70N06 |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت RFP70N06 |
دانلود دیتاشیت |
|---|
سایر مستندات
TO220B03 Pkg Drawing 1 pages
RFP70N06 10 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi RFP70N06
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 150W
- Total Gate Charge (Qg@Vgs): 156nC@20V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 2250pF@25V
- Continuous Drain Current (Id): 70A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 206pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10V,70A
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 156nC @ 20V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: RFP70
- detail: N-Channel 60V 70A (Tc) 150W (Tc) Through Hole TO-220-3
