APT25GP90BDQ1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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APT25GP90BDQ1(G)
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حجم فایل
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452.627
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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Manufacturer:
Microchip Technology
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Series:
POWER MOS 7®
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Packaging:
Tube
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Part Status:
Not For New Designs
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IGBT Type:
PT
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Voltage - Collector Emitter Breakdown (Max):
900V
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Current - Collector (Ic) (Max):
72A
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Current - Collector Pulsed (Icm):
110A
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Vce(on) (Max) @ Vge, Ic:
3.9V @ 15V, 25A
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Power - Max:
417W
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Switching Energy:
370µJ (off)
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Input Type:
Standard
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Gate Charge:
110nC
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Td (on/off) @ 25°C:
13ns/55ns
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Test Condition:
600V, 40A, 4.3Ohm, 15V
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247 [B]
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detail:
IGBT PT 900V 72A 417W Through Hole TO-247 [B]
