APT10035B2FLLG 数据手册
数据手册规格
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数据手册名称
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APT10035(B2,L)FLL(G)
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文件大小
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185.884
千字节
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文件类型
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pdf
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页数
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5
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技术规格
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Manufacturer:
Microchip Technology
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Series:
POWER MOS 7®
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
1000V
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Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
370mOhm @ 14A, 10V
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Vgs(th) (Max) @ Id:
5V @ 2.5mA
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Gate Charge (Qg) (Max) @ Vgs:
186nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
5185pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
690W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
T-MAX™ [B2]
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Package / Case:
TO-247-3 Variant
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detail:
N-Channel 1000V 28A (Tc) 690W (Tc) Through Hole T-MAX™ [B2]
