APTM100H35FTG دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت APTM100H35FTG	دانلود دیتاشیت

Manufacturer: Microchip Technology
Series: -
Packaging: Bulk
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
detail: Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 22A 390W Chassis Mount SP4