APTMC60TL11CT3AG دیتاشیت

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Manufacturer: Microchip Technology
Series: -
Packaging: Bulk
Part Status: Active
FET Type: 4 N-Channel (Three Level Inverter)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Power - Max: 125W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
detail: Mosfet Array 4 N-Channel (Three Level Inverter) 1200V (1.2kV) 28A (Tc) 125W Chassis Mount SP3