دیتاشیت IS61NLP25636A-200TQLI

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دانلود دیتاشیت IS61N(LP,VP)yyyyyA	IS61N(LP,VP)yyyyyA Datasheet

RoHS: true
Category: Memory/SRAM
Datasheet: ISSI(Integrated Silicon Solution) IS61NLP25636A-200TQLI
Memory Size: 9Mbit
upply Voltage (Vcc): 3.135V~3.465V
Operating Temperature: -40°C~+85°C
Package: LQFP-100(14x20)
Manufacturer: ISSI(Integrated Silicon Solution)
Series: -
Packaging: Tray
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135V ~ 3.465V
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
detail: SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 100-TQFP (14x20)