IS6xWV5128EDBLL 数据手册

IS6xWV5128EDBLL

数据手册规格

数据手册名称 IS6xWV5128EDBLL
文件大小 379.396 千字节
文件类型 pdf
页数 14

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技术规格

  • RoHS: true
  • Category: Memory/SRAM
  • Datasheet: ISSI(Integrated Silicon Solution) IS61WV5128EDBLL-10BLI
  • Memory Size: 4Mbit
  • upply Voltage (Vcc): 2.4V~3.6V
  • Operating Temperature: -40°C~+85°C
  • Package: TFBGA-36(6x8)
  • Manufacturer: ISSI(Integrated Silicon Solution)
  • Series: -
  • Packaging: Tray
  • Part Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Interface: Parallel
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Mounting Type: Surface Mount
  • Package / Case: 36-TFBGA
  • Supplier Device Package: 36-TFBGA (6x8)
  • detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-TFBGA (6x8)