FDT439N دیتاشیت

FDT439N

مشخصات دیتاشیت

نام دیتاشیت FDT439N
حجم فایل 72.656 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت FDT439N

دانلود دیتاشیت

سایر مستندات

FDT439N 5 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDT439N
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 3W
  • Total Gate Charge (Qg@Vgs): 15nC@4.5V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 500pF@15V
  • Continuous Drain Current (Id): 6.3A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 45mΩ@4.5V,6.3A
  • Package: SOT-223-4
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
  • Base Part Number: FDT43
  • detail: N-Channel 30V 6.3A (Ta) 3W (Ta) Surface Mount SOT-223-4

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