FDMC89521L دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDMC89521L	دانلود دیتاشیت

RoHS: true
Type: 2 N-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMC89521L
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 1.9W
Total Gate Charge (Qg@Vgs): 24nC@10V
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 1635pF@30V
Continuous Drain Current (Id): 8.2A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 17mΩ@10V,8.2A
Package: Power-33-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Power - Max: 1.9W (Ta), 16W (Tc)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)
Base Part Number: FDMC89
detail: Mosfet Array 2 N-Channel (Dual) 60V 8.2A (Ta) 1.9W (Ta), 16W (Tc) Surface Mount 8-Power33 (3x3)