دیتاشیت FDG6304P
مشخصات دیتاشیت
| نام دیتاشیت |
FDG6304P
|
| حجم فایل |
274.148
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
2 P-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDG6304P
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
300mW
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Total Gate Charge (Qg@Vgs):
1.5nC@4.5V
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Drain Source Voltage (Vdss):
25V
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Input Capacitance (Ciss@Vds):
62pF@10V
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Continuous Drain Current (Id):
410mA
-
Gate Threshold Voltage (Vgs(th)@Id):
1.5V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.1Ω@410mA,4.5V
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Package:
SOT-363
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 P-Channel (Dual)
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
25V
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Current - Continuous Drain (Id) @ 25°C:
410mA
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Rds On (Max) @ Id, Vgs:
1.1Ohm @ 410mA, 4.5V
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Vgs(th) (Max) @ Id:
1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds:
62pF @ 10V
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Power - Max:
300mW
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Mounting Type:
Surface Mount
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Package / Case:
6-TSSOP, SC-88, SOT-363
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Supplier Device Package:
SC-88 (SC-70-6)
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Base Part Number:
FDG6304
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detail:
Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6)
