دیتاشیت FDMC510P
مشخصات دیتاشیت
| نام دیتاشیت |
FDMC510P
|
| حجم فایل |
318.331
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FDMC510P
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
2.3W;41W
-
Total Gate Charge (Qg@Vgs):
116nC@4.5V
-
Input Capacitance (Ciss@Vds):
7860pF@10V
-
Continuous Drain Current (Id):
null;18A
-
Gate Threshold Voltage (Vgs(th)@Id):
1V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
8mΩ@12A,4.5V
-
Package:
WDFN-8
-
Manufacturer:
onsemi
-
Series:
PowerTrench®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
20V
-
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 18A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
-
Rds On (Max) @ Id, Vgs:
8mOhm @ 12A, 4.5V
-
Vgs(th) (Max) @ Id:
1V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
116nC @ 4.5V
-
Vgs (Max):
±8V
-
Input Capacitance (Ciss) (Max) @ Vds:
7860pF @ 10V
-
FET Feature:
-
-
Power Dissipation (Max):
2.3W (Ta), 41W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
8-MLP (3.3x3.3)
-
Package / Case:
8-PowerWDFN
-
Base Part Number:
FDMC51
-
detail:
P-Channel 20V 12A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
