NTZD3152PT1G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NTZD3152PT1G	دانلود دیتاشیت

RoHS: true
Type: 2 P-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTZD3152PT1G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 250mW
Total Gate Charge (Qg@Vgs): 2.5nC@4.5V
Drain Source Voltage (Vdss): 20V
Input Capacitance (Ciss@Vds): 175pF@16V
Continuous Drain Current (Id): 430mA
Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 900mΩ@4.5V,430mA
Package: SOT-563
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Part Number: NTZD3152
detail: Mosfet Array 2 P-Channel (Dual) 20V 430mA 250mW Surface Mount SOT-563