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IS61WV25616EDALL-20BLI-TR Datasheet
Datasheet specifications
| Datasheet's name | IS61WV25616EDALL-20BLI-TR |
|---|---|
| File size | 80.567 KB |
| File type | |
| Number of pages | 15 |
Download Datasheet IS61WV25616EDALL-20BLI-TR |
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IS61WV25616EDALL 15 pages
Technical specifications
- RoHS: true
- Category: Memory/SRAM
- Datasheet: ISSI(Integrated Silicon Solution) IS61WV25616EDALL-20BLI-TR
- Memory Size: 4Mbit
- upply Voltage (Vcc): 1.65V~2.2V
- Operating Temperature: -40°C~+85°C
- Package: TFBGA-48(6x8)
- Manufacturer: ISSI(Integrated Silicon Solution)
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Interface: Parallel
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 1.65V ~ 2.2V
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
- detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 20ns 48-TFBGA (6x8)
