NTR4170NT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NTR4170NT1G
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حجم فایل
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89.005
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTR4170NT1G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
480mW
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Total Gate Charge (Qg@Vgs):
4.76nC@4.5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
432pF@15V
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Continuous Drain Current (Id):
2.4A
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Gate Threshold Voltage (Vgs(th)@Id):
1.4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
55mΩ@10V,3.2A
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Package:
SOT-23(TO-236)
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
-
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Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
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Rds On (Max) @ Id, Vgs:
55mOhm @ 3.2A, 10V
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Vgs(th) (Max) @ Id:
1.4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
4.76nC @ 4.5V
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Vgs (Max):
±12V
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Input Capacitance (Ciss) (Max) @ Vds:
432pF @ 15V
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FET Feature:
-
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Power Dissipation (Max):
480mW (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-23-3 (TO-236)
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
NTR417
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detail:
N-Channel 30V 480mW (Ta) Surface Mount SOT-23-3 (TO-236)
