دیتاشیت IS61WV51216EEBLL-10BLI-TR

مشخصات دیتاشیت

دانلود دیتاشیت IS61WV51216EExLL, 64WV51216EEBLL	IS61WV51216EExLL, 64WV51216EEBLL Datasheet

RoHS: true
Category: Memory/SRAM
Datasheet: ISSI(Integrated Silicon Solution) IS61WV51216EEBLL-10BLI-TR
Memory Size: 8Mbit
upply Voltage (Vcc): 2.4V~3.6V
Operating Temperature: -40°C~+85°C
Package: TFBGA-48(6x8)
Manufacturer: ISSI(Integrated Silicon Solution)
Series: -
Packaging: Tray
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)
detail: SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-TFBGA (6x8)