FDD16AN08A0 دیتاشیت

FDD16AN08A0

مشخصات دیتاشیت

نام دیتاشیت FDD16AN08A0
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت FDD16AN08A0

دانلود دیتاشیت

سایر مستندات

FDD16AN08A0 14 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDD16AN08A0
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 135W
  • Total Gate Charge (Qg@Vgs): 47nC@10V
  • Drain Source Voltage (Vdss): 75V
  • Input Capacitance (Ciss@Vds): 1874pF@25V
  • Continuous Drain Current (Id): 9A;50A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@10V,50A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: UltraFET™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1874pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: FDD16
  • detail: N-Channel 75V 9A (Ta), 50A (Tc) 135W (Tc) Surface Mount DPAK

محصولات مشابه