FDD5353 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDD5353	دانلود دیتاشیت

FDD5353 8 pages

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDD5353
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.1W;69W
Total Gate Charge (Qg@Vgs): 65nC@10V
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 3215pF@30V
Continuous Drain Current (Id): 11.5A;50A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 12.3mΩ@10V,10.7A
Package: TO-252
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 30V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: FDD535
detail: N-Channel 60V 11.5A (Ta), 50A (Tc) 3.1W (Ta), 69W (Tc) Surface Mount D-PAK (TO-252AA)