FDMC012N03 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDMC012N03	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMC012N03
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.3W;64W
Total Gate Charge (Qg@Vgs): 110nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 8183pF@15V
Continuous Drain Current (Id): 35A;185A
Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.23mΩ@35A,10V
Package: Power-33-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 8183pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: Power33
Package / Case: 8-PowerWDFN
Base Part Number: FDMC01
detail: N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount Power33