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- دیتاشیت D45H8G
D45H8G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | D45H8G |
|---|---|
| حجم فایل | 69.706 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 5 |
دانلود دیتاشیت D45H8G |
دانلود دیتاشیت |
|---|
سایر مستندات
D4(4,5)H(8-11) 8 pages
D44H11G 5 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi D45H8G
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 10A
- Power Dissipation (Pd): 2W
- Transition Frequency (fT): 40MHz
- DC Current Gain (hFE@Ic,Vce): 40@4A,1V
- Collector Cut-Off Current (Icbo): 10uA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,400mA
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 50W
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: D45H8
- detail: Bipolar (BJT) Transistor PNP 60V 10A 50W Through Hole TO-220AB