FDMC6679AZ دیتاشیت

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RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.3W;41W
Total Gate Charge (Qg@Vgs): 91nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 3970pF@15V
Continuous Drain Current (Id): 11.5A;20A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@11.5A,10V
Package: WDFN-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-MLP (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: FDMC66
detail: P-Channel 30V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)