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مشاهده دیتاشیت FJB102TM	دانلود دیتاشیت

FJB102 7 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Darlington Transistors
Datasheet: onsemi FJB102TM
Transistor Type: NPN
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 8A
Power Dissipation (Pd): 80W
Transition frequency (fT): -
DC current gain (hFE@Vce,Ic): 1000@4V,3A
Collector-emitter voltage (Vceo): 100V
Collector cut-off current (Icbo@Vcb): 50uA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@8A,80mA
Package: D2PAK
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Base Part Number: FJB102
detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A 80W Surface Mount TO-263 (D2Pak)