FCH023N65S3L4 دیتاشیت

FCH023N65S3L4

مشخصات دیتاشیت

نام دیتاشیت FCH023N65S3L4
حجم فایل 68.951 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت FCH023N65S3L4

دانلود دیتاشیت

سایر مستندات

FCH023N65S3L4 9 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCH023N65S3L4
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 595W
  • Total Gate Charge (Qg@Vgs): 222nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 7160pF@400V
  • Continuous Drain Current (Id): 75A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@7.5mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@37.5A,10V
  • Package: TO-247-4
  • Manufacturer: onsemi
  • Series: SuperFET® III
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7160pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-4
  • Base Part Number: FCH02
  • detail: N-Channel 650V 75A (Tc) 595W (Tc) Through Hole TO-247

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