BC,SBC846ALT1G Series Datasheet

BC,SBC846ALT1G Series

Datasheet specifications

Datasheet's name BC,SBC846ALT1G Series
File size 233.672 KB
File type pdf
Number of pages 14

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BC847ALT1G 14 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi BC848CLT1G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 300mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 420@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA,5mA
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: *
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • Base Part Number: BC848
  • detail: Bipolar (BJT) Transistor

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