FDB52N20TM دیتاشیت

FDB52N20TM

مشخصات دیتاشیت

نام دیتاشیت FDB52N20TM
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FDB52N20TM

دانلود دیتاشیت

سایر مستندات

FDB52N20 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDB52N20TM
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 357W
  • Total Gate Charge (Qg@Vgs): 63nC@10V
  • Drain Source Voltage (Vdss): 200V
  • Input Capacitance (Ciss@Vds): 2900pF@25V
  • Continuous Drain Current (Id): 52A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 49mΩ@26A,10V
  • Package: TO-263-3
  • Manufacturer: onsemi
  • Series: UniFET™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: FDB52
  • detail: N-Channel 200V 52A (Tc) 357W (Tc) Surface Mount D²PAK

محصولات مشابه