FDMS86101DC دیتاشیت

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مشاهده دیتاشیت FDMS86101DC	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMS86101DC
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.2W;125W
Total Gate Charge (Qg@Vgs): 44nC@10V
Drain Source Voltage (Vdss): 100V
Input Capacitance (Ciss@Vds): 3135pF@50V
Continuous Drain Current (Id): 14.5A;60A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@14.5A,10V
Package: UDFN-8
Manufacturer: onsemi
Series: Dual Cool™, PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3135pF @ 50V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: Dual Cool™56
Package / Case: 8-PowerTDFN
Base Part Number: FDMS86
detail: N-Channel 100V 14.5A (Ta), 60A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount Dual Cool™56