NTTFS5116PLTAG دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NTTFS5116PLTAG	دانلود دیتاشیت

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTTFS5116PLTAG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.2W;40W
Total Gate Charge (Qg@Vgs): 25nC@10V
Input Capacitance (Ciss@Vds): 1258pF@30V
Continuous Drain Current (Id): 5.7A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 52mΩ@6A,10V
Package: WDFN-8(3.3x3.3)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 30V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: NTTFS5
detail: P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3)