FDMS86350ET80 دیتاشیت

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مشاهده دیتاشیت FDMS86350ET80	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMS86350ET80
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 187W
Total Gate Charge (Qg@Vgs): 90nC@0~8V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 8.03nF@40V
Continuous Drain Current (Id): 198A
Gate Threshold Voltage (Vgs(th)@Id): 3.8V@250uA
Reverse Transfer Capacitance (Crss@Vds): 31pF@40V
Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@10V,25A
Package: Power-56-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10680pF @ 40V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: Power56
Package / Case: 8-PowerTDFN
Base Part Number: FDMS86
detail: N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount Power56