دیتاشیت BBS3002-DL-1E
مشخصات دیتاشیت
| نام دیتاشیت |
BBS3002
|
| حجم فایل |
271.944
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi BBS3002-DL-1E
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
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Package:
TO-263-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
5.8mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
280nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
13200pF @ 20V
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FET Feature:
-
-
Power Dissipation (Max):
90W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
BBS300
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detail:
P-Channel 60V 100A (Ta) 90W (Tc) Surface Mount D²PAK (TO-263)
