MBT2222ADW1T1G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MBT2222ADW1T1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MBT2222ADW1T1G
Transistor Type: 2 NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 600mA
Power Dissipation (Pd): 150mW
Transition Frequency (fT): 300MHz
DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
Collector Cut-Off Current (Icbo): 10nA
Collector-Emitter Breakdown Voltage (Vceo): 40V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@50mA,500mA
Package: SOT-323-6
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 150mW
Frequency - Transition: 300MHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: MBT2222
detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 300MHz 150mW Surface Mount SC-88/SC70-6/SOT-363