2N3906, MMBT3906, PZT3906 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت 2N3906, MMBT3906, PZT3906	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi 2N3906TAR
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 200mA
Power Dissipation (Pd): 625mW
Transition Frequency (fT): 250MHz
DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
Collector Cut-Off Current (Icbo): -
Collector-Emitter Breakdown Voltage (Vceo): 40V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA
Package: TO-92-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N3906
detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3