2N3906TFR 数据手册
其他文档
2N3906, MMBT3906, PZT3906 11 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi 2N3906TFR
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 200mA
- Power Dissipation (Pd): 625mW
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA
- Package: TO-92-3
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 250MHz
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Base Part Number: 2N3906
- detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3