MMBT5088LT1, 5089LT1 دیتاشیت

مشخصات دیتاشیت

دانلود دیتاشیت MMBT5088LT1, 5089LT1	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MMBT5088LT1G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 50mA
Power Dissipation (Pd): 300mW
Transition Frequency (fT): 50MHz
DC Current Gain (hFE@Ic,Vce): 300@100?A,5V
Collector Cut-Off Current (Icbo): 50nA
Collector-Emitter Breakdown Voltage (Vceo): 30V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@10mA,1mA
Package: SOT-23(TO-236)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Power - Max: 300mW
Frequency - Transition: 50MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT5088
detail: Bipolar (BJT) Transistor NPN 30V 50mA 50MHz 300mW Surface Mount SOT-23-3 (TO-236)