BCW68GL دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت BCW68GL	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi BCW68GLT1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 800mA
Power Dissipation (Pd): 225mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 120@10mA,1V
Collector Cut-Off Current (Icbo): 20nA
Collector-Emitter Breakdown Voltage (Vceo): 45V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 700mV@500mA,50mA
Package: SOT-23(TO-236)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: BCW68
detail: Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 225mW Surface Mount SOT-23-3 (TO-236)