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RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: TECH PUBLIC NTJD5121NT1G
Package: SOT-363
Manufacturer: TECH PUBLIC
Type: 2 N-Channel
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 250mW
Total Gate Charge (Qg@Vgs): 0.9nC@4.5V
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 26pF@20V
Continuous Drain Current (Id): 295mA
Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6Ω@10V,500mA
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: NTJD51
detail: Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363