دیتاشیت BVSS123LT1G

BVSS123LT1G

مشخصات دیتاشیت

نام دیتاشیت BVSS123LT1G
حجم فایل 71.803 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

BVSS123LT1G

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi BVSS123LT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 225mW
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 20pF@25V
  • Continuous Drain Current (Id): 170mA
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@1mA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6Ω@100mA,10V
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -65°C ~ 125°C
  • Base Part Number: SS12
  • detail: Diode Schottky 20V 1A Surface Mount SMA (DO-214AC)

محصولات مشابه