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- دیتاشیت BVSS84LT1G
BVSS84LT1G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | BVSS84LT1G |
|---|---|
| حجم فایل | 74.876 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 4 |
دانلود دیتاشیت BVSS84LT1G |
دانلود دیتاشیت |
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سایر مستندات
B(V)SS84L Datasheet 4 pages
مشخصات فنی
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi BVSS84LT1G
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 225mW
- Total Gate Charge (Qg@Vgs): 2.2nC@10V
- Drain Source Voltage (Vdss): 50V
- Input Capacitance (Ciss@Vds): 36pF@5V
- Continuous Drain Current (Id): 130mA
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10Ω@5V,100mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 5V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: BVSS84
- detail: P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3