دیتاشیت SBC807-40WT1G

مشخصات دیتاشیت

دانلود دیتاشیت BC807-(25,40)WT1G	BC807-(25,40)WT1G Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi SBC807-40WT1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 500mA
Power Dissipation (Pd): 460mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 250@100mA,1V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 45V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 700mV@500mA,50mA
Package: SC-70-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 460mW
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: BC807
detail: Bipolar (BJT) Transistor PNP 45V 500mA 100MHz 460mW Surface Mount SC-70-3 (SOT323)