KSD1616AGTA دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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KSD1616AGTA
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حجم فایل
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70.016
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi KSD1616AGTA
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
750mW
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Transition Frequency (fT):
160MHz
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DC Current Gain (hFE@Ic,Vce):
200@100mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
60V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
150mV@1A,50mA
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Package:
TO-92-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
1A
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Voltage - Collector Emitter Breakdown (Max):
60V
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Vce Saturation (Max) @ Ib, Ic:
300mV @ 50mA, 1A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
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Power - Max:
750mW
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Frequency - Transition:
160MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
KSD1616
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detail:
Bipolar (BJT) Transistor NPN 60V 1A 160MHz 750mW Through Hole TO-92-3
