S2SC4617G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت S2SC4617G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi S2SC4617G
Transistor Type: NPN
Collector Current (Ic): 100mA
Power Dissipation (Pd): 125mW
Transition Frequency (fT): 180MHz
DC Current Gain (hFE@Ic,Vce): 120@1mA,6V
Collector Cut-Off Current (Icbo): 500nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@5mA,60mA
Package: SC-75-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 125mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: S2SC4
detail: Bipolar (BJT) Transistor NPN 50V 100mA 180MHz 125mW Surface Mount SC-75, SOT-416