BC516-D27Z 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet: onsemi BC516-D27Z
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 1A
- Power Dissipation (Pd): 625mW
- Transition frequency (fT): 200MHz
- DC current gain (hFE@Vce,Ic): 30000@2V,20mA
- Collector-emitter voltage (Vceo): 30V
- Collector cut-off current (Icbo@Vcb): 100nA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1V@100mA,100uA
- Package: TO-92-3
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Base Part Number: BC516
- detail: Bipolar (BJT) Transistor PNP - Darlington 30V 1A 200MHz 625mW Through Hole TO-92-3