NTJS3151PT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NTJS3151PT1G
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حجم فایل
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91.763
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTJS3151PT1G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
625mW
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Total Gate Charge (Qg@Vgs):
8.6nC@4.5V
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Drain Source Voltage (Vdss):
12V
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Input Capacitance (Ciss@Vds):
850pF@12V
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Continuous Drain Current (Id):
2.7A
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Gate Threshold Voltage (Vgs(th)@Id):
1.2V@100uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
60mΩ@4.5V,3.3A
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Package:
SC-88
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
12V
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Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
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Rds On (Max) @ Id, Vgs:
60mOhm @ 3.3A, 4.5V
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Vgs(th) (Max) @ Id:
1.2V @ 100µA
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Gate Charge (Qg) (Max) @ Vgs:
8.6nC @ 4.5V
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Vgs (Max):
±12V
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Input Capacitance (Ciss) (Max) @ Vds:
850pF @ 12V
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FET Feature:
-
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Power Dissipation (Max):
625mW (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SC-88/SC70-6/SOT-363
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Package / Case:
6-TSSOP, SC-88, SOT-363
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Base Part Number:
NTJS31
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detail:
P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
