دیتاشیت BCP56-10T1G
مشخصات دیتاشیت
| نام دیتاشیت |
BCP56 Series
|
| حجم فایل |
70.758
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BCP56-10T1G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
1.5W
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Transition Frequency (fT):
130MHz
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DC Current Gain (hFE@Ic,Vce):
63@150mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
80V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@500mA,50mA
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Package:
SOT-223
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
1A
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Voltage - Collector Emitter Breakdown (Max):
80V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
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Power - Max:
1.5W
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Frequency - Transition:
130MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-261-4, TO-261AA
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Supplier Device Package:
SOT-223
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Base Part Number:
BCP56
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detail:
Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.5W Surface Mount SOT-223
