NTR4171PT1G دیتاشیت

NTR4171PT1G

مشخصات دیتاشیت

نام دیتاشیت NTR4171PT1G
حجم فایل 87.774 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NTR4171PT1G-Isee

دانلود دیتاشیت

سایر مستندات

NTR4171P 6 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTR4171PT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 480mW
  • Total Gate Charge (Qg@Vgs): 15.6nC@10V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 720pF@15V
  • Continuous Drain Current (Id): 2.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@10V,2.2A
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 480mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Base Part Number: NTR417
  • detail: P-Channel 30V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)

محصولات مشابه