دیتاشیت MMBFJ110
مشخصات دیتاشیت
| نام دیتاشیت |
MMBFJ110
|
| حجم فایل |
339.792
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/JFETs
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FET Type:
N-Channel
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Datasheet:
onsemi MMBFJ110
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Operating Temperature:
-
-
Total Device Dissipation (Pd):
460mW
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Drain Current (Idss@Vds,Vgs=0):
10mA@15V
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Gate-Source Breakdown Voltage (V(BR)GSS):
25V
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Gate-Source Cutoff Voltage (VGS(off)@ID):
4V@10nA
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Static Drain-Source On Resistance (RDS(on)):
18Ω
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Package:
SSOT-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Breakdown (V(BR)GSS):
25V
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Current - Drain (Idss) @ Vds (Vgs=0):
10mA @ 15V
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Voltage - Cutoff (VGS off) @ Id:
4V @ 10nA
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Input Capacitance (Ciss) (Max) @ Vds:
-
-
Resistance - RDS(On):
18 Ohms
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Power - Max:
460mW
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SuperSOT-3
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Base Part Number:
MMBFJ1
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detail:
JFET N-Channel 25V 460mW Surface Mount SuperSOT-3
