NTGS4111PT1G دیتاشیت

NTGS4111PT1G

مشخصات دیتاشیت

نام دیتاشیت NTGS4111PT1G
حجم فایل 91.307 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت NTGS4111PT1G

دانلود دیتاشیت

سایر مستندات

NTGS4111P, NVGS4111P 7 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTGS4111PT1G
  • Power Dissipation (Pd): 630mW
  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 2.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,3.7A
  • Package: SOT-23-6
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 630mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
  • Base Part Number: NTGS41
  • detail: P-Channel 30V 2.6A (Ta) 630mW (Ta) Surface Mount 6-TSOP

محصولات مشابه