دیتاشیت NSS60200LT1G
مشخصات دیتاشیت
| نام دیتاشیت |
NSS60200LT1G
|
| حجم فایل |
88.942
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
Transistor Type:
PNP
-
Current - Collector (Ic) (Max):
2A
-
Voltage - Collector Emitter Breakdown (Max):
60V
-
Vce Saturation (Max) @ Ib, Ic:
220mV @ 200mA, 2A
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 2V
-
Power - Max:
460mW
-
Frequency - Transition:
100MHz
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Supplier Device Package:
SOT-23-3 (TO-236)
-
Base Part Number:
NSS602
-
detail:
Bipolar (BJT) Transistor PNP 60V 2A 100MHz 460mW Surface Mount SOT-23-3 (TO-236)
