دیتاشیت FDG6321C

FDG6321C

مشخصات دیتاشیت

نام دیتاشیت FDG6321C
حجم فایل 298.721 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FDG6321C

FDG6321C Datasheet

مشخصات

  • RoHS: true
  • Type: 1PCSN-Channel&1PCSP-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDG6321C
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 300mW
  • Total Gate Charge (Qg@Vgs): 2.3nC@4.5V
  • Drain Source Voltage (Vdss): 25V
  • Input Capacitance (Ciss@Vds): 50pF@10V
  • Continuous Drain Current (Id): 500mA;410mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 450mΩ@500mA,4.5V
  • Package: SOT-363-6(SC-70-6)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88 (SC-70-6)
  • Base Part Number: FDG6321
  • detail: Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)