NVTR4502PT1G دیتاشیت

NVTR4502PT1G

مشخصات دیتاشیت

نام دیتاشیت NVTR4502PT1G
حجم فایل 98.814 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت NVTR4502PT1G

دانلود دیتاشیت

سایر مستندات

N(V)TR4502P 5 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVTR4502PT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 400mW
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 200pF@15V
  • Continuous Drain Current (Id): 1.13A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 200mΩ@10V,1.95A
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Base Part Number: NVTR45
  • detail: P-Channel 30V 1.13A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)

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